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| MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features * High Isolation Voltage, 5300 VRMS * No Base Terminal Connection for Improved Common Mode Interface Immunity * Long Term Stability * Industry Standard Dual-in-Line Package * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179009 A C NC 1 2 3 6B 5C 4E e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Order Information Part MOC8101 MOC8102 MOC8103 MOC8104 MOC8105 MOC8101-X006 MOC8101-X007 MOC8101-X009 MOC8102-X006 MOC8102-X007 MOC8102-X009 MOC8104-X006 MOC8104-X009 MOC8105-X006 MOC8105-X009 Remarks CTR 50 - 80 %, DIP-6 CTR 73 - 117 %, DIP-6 CTR 108 - 173 %, DIP-6 CTR 160 - 256 %, DIP-6 CTR 65 - 133 %, DIP-6 CTR 50 - 80 %, DIP-6 400 mil (option 6) CTR 50 - 80 %, SMD-6 (option 7) CTR 50 - 80 %, SMD-6 (option 9) CTR 73 - 117 %, DIP-6 400 mil (option 6) CTR 73 - 117 %, SMD-6 (option 7) CTR 73 - 117 %, SMD-6 (option 9) CTR 160 - 256 %, DIP-6 400 mil (option 6) CTR 160 - 256 %, SMD-6 (option 9) CTR 65 - 133 %, DIP-6 400 mil (option 6) CTR 65 - 133 %, SMD-6 (option 9) Description The MOC8101/ 2/ 3/ 4/ 5 family optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. The base terminal of the MOC8101/ 2/ 3/ 4/ 5 is not connected, resulting in a substantially improved common-mode interference immunity. For additional information on the available options refer to Option Information. Document Number 83660 Rev. 1.4, 26-Oct-04 www.vishay.com 1 MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward continuous current Surge forward current Power dissipation Derate Linearly from 25 C t 1 0 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.33 Unit V mA A mW mW/C Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Derate linearly from 25 C Power dissipation Pdiss Test condition Symbol BVCEO BVECO IC Value 30 7.0 50 2.00 150 Unit V V mA mW/C mW Coupler Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Derate linearly from 25 C Total power dissipation Storage temperature Operating temperature Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm Ptot Tstg Tamb Tj Tsld VIO = 500 V RIO Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 3.33 250 - 55 to + 150 - 55 to + 100 100 260 mW/C mW C C C C Unit VRMS mm mm mm www.vishay.com 2 Document Number 83660 Rev. 1.4, 26-Oct-04 MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance Test condition IF = 10 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Rthja 6.0 0.01 25 750 10 Min Typ. 1.25 Max 1.5 Unit V V A pF K/W Output Parameter Collector-emitter capacitance Collector-emitter dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Thermal resistance Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 10 C, TA = 25 C VCE = 10 C, TA = 100 C IC = 1.0 mA IE = 100 A MOC8101 MOC8102 Part Symbol CCE ICEO1 ICEO1 BVCEO BVECO Rthja 30 7.0 500 Min Typ. 5.2 1.0 1.0 50 Max Unit pF nA A V V K/W Coupler Parameter Saturation voltage collectoremitter Coupling capacitance Test condition IF = 5.0 mA Symbol VCEsat CC Min Typ. 0.25 0.6 Max 0.4 Unit V pF Current Transfer Ratio Parameter Current Transfer Ratio Test condition VCE = 10 V, IF = 10 mA Part MOC8101 MOC8102 MOC8103 MOC8104 MOC8105 Symbol CTR CTR CTR CTR CTR Min 50 73 108 160 65 Typ. Max 80 117 173 256 133 Unit % % % % % Document Number 83660 Rev. 1.4, 26-Oct-04 www.vishay.com 3 MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors Switching Characteristics Parameter Turn-on time Turn-off time Rise time Fall time Cut off frequency Test condition VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 10 V, IC = 2.0 mA, RL = 100 Symbol ton toff tr tf fco Min Typ. 3.0 2.3 2.0 2.0 250 Max Unit s s s s kHz Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.70 1.50 VF (V) 25 IF = 10 mA 20 IC (mA) MOC8104 1.30 TA = 55 C 1.10 0.90 0.70 TA = 100 C 0.1 1.0 I F (mA) Figure 1. Forward Voltage vs. Forward Current 15 10 5 0 MOC8103 MOC8105 MOC8102 MOC8101 TA = 25 C 10.0 100.0 imoc8101_04 0 1 2 3 4 imoc8101_02 56 VCE (V) 7 8 9 10 Figure 3. Collector Current vs. Collector Emitter Voltage 10.00 10.0 IC (Normalized) 1.00 Normalized to IF = 10 mA IC(mA) 1.0 0.10 0.01 0.1 imoc8101_03 0.1 1.0 I F(mA) 10.0 100.0 -60 -40 -20 imoc8101_05 0 20 40 T (C) 60 80 100 120 Figure 2. Collector Current vs. LED Forward Current Figure 4. Collector Current vs. Ambient Temperature www.vishay.com 4 Document Number 83660 Rev. 1.4, 26-Oct-04 MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors 10000.0 C, Capacitance (pF) Normalized to VCE = 10 V ICEO (Normalized) 1000.0 100.0 10.0 1.0 0.1 0 20 40 VCE = 30 V VCE = 10 V 20 18 16 14 12 10 8 6 4 2 0 0.01 f = 1 MHz CLED CCE imoc8101_06 TA (C) 60 80 100 imoc8101_07 0.1 1 Voltage (V) 10 100 Figure 5. Collector-Emitter Dark Current vs. Ambient Temperature Figure 6. Capacitance vs. Voltage VCC = 10 V IF Input IC R L=100 10% Output 90% tr t on Test Circuit imoc81010_01 Input Pulse Output Pulse tf t off Waveforms Figure 7. Switching Time Test Circuit and Waveforms Document Number 83660 Rev. 1.4, 26-Oct-04 www.vishay.com 5 MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 www.vishay.com 6 Document Number 83660 Rev. 1.4, 26-Oct-04 MOC8101/ 2/ 3/ 4/ 5 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83660 Rev. 1.4, 26-Oct-04 www.vishay.com 7 |
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